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SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.
B
KTC945
EPITAXIAL PLANAR NPN TRANSISTOR
C
FEATURES
: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) Low Noise : NF=1dB(Typ.). at f=1kHz Complementary to KTA733.
K D E G N
A
Excellent hFE Linearity.
MAXIMUM RATING (Ta=25
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range
)
SYMBOL VCBO VCEO VEBO IC PC Tj Tstg RATING 60 50 5 150 625 150 -55 150 UNIT V
L
F
H
F
1
2
3
V V mA mW
M
C
DIM A B C D E F G H J K L M N
MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 14.00 + 0.50 0.55 MAX 2.30 0.45 MAX 1.00
J
1. EMITTER 2. COLLECTOR 3. BASE
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Noise Figure Note : hFE Classification R:90 180, Q:135
)
TEST CONDITION IC=100 A, IE=0 IC=1mA, IB=0 IE=100 A, IC=0 VCB=60V, IE=0 VEB=5V, IC=0 VCE=6V, IC=2mA IC=100mA, IB=10mA IC=100mA, IB=10mA VCE=10V, IC=10mA VCB=10V, IE=0, f=1MHz VCE=6V, IC=0.1mA Rg=10k , f=1kHz P:200 400, K:300 600 MIN. 60 50 5 90 80 TYP. 0.1 300 2.0 1.0 MAX. 0.1 0.1 600 0.25 1.0 3.5 10 V V MHz pF dB UNIT V V V A A
SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE (Note) VCE(sat) VBE(sat) fT Cob NF 270,
2001. 9. 14
Revision No : 2
1/2

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